Planning for these workloads is extremely difficult because they are transient (both instructional and data-dependent), often ...
Applied Materials offers premier exposure to the AI infrastructure buildout, leveraging its dominant materials engineering ...
A simple plasma-based edge termination approach yields 10 kV-class GaN diodes with a lateral geometry.
The capacitive RF-MEMS switch is monolithically incorporated into the backend-of-line (BEOL) of IHP's SiGe-BiCMOS technology ...
Combining GaN transistors with silicon-based digital circuits enables complex computing functions built directly into power ...
Cambridge researchers develop hafnium-oxide memristors to significantly reduce AI energy consumption by merging memory and ...
Rising demand for chips and tight capacity give Taiwan Semiconductor Manufacturing (NYSE:TSM) a unique position to have ...
The work, reported by IEEE Spectrum, revolves around modifying a standard laboratory instrument, the vector network analyzer ...
Government-funded academic research on parallel computing, stream processing, real-time shading languages, and programmable ...
There’s a long history of devices originally used for communication being made into computers, with relay switching circuits, ...
Intel has unveiled a Gallium Nitride (GaN) chiplet measuring a mere 19 micrometers in thickness. First showcased at the IEEE International Electron Devices Meeting in December last year, this ...